Verfahren zur Herstellung eines Halbleiterbauelements

摘要

A method for fabricating a semiconductor device comprises coating the surface of a semiconductor element (2) with a curable silicone composition (7) in which there is dispersed a filler (8) having an average particle diameter of 0.01 to 500 micrometers and a specific gravity of 0.01 to 0.95 and thereafter curing said composition (7) after the elapse of sufficient time for the filler (8) in the layer of the composition adjoining the element to migrate into the layer of said composition remote from the element (2).