| 摘要 |
<p>A liquid precursor containing thallium is applied to a first electrode (28, 58), RTP baked at a temperature lower than 725 °C, and annealed at the same temperature for a time period from one to five hours to yield a ferroelectric layered superlattice material (30, 60). A second electrode (32, 77) is formed to form a capacitor (16, 72) and a second anneal is performed at a temperature lower than 725 °C. If the material is strontium bismuth thallium tantalate, the precursor contains (m-1) mole-equivalents of strontium for each of (2.2-x) mole-equivalents of bismuth, x mole-equivalents of thallium, and m mole-equivalents of tantalum, where m=2 and 0.0∫x≤2.2.</p> |
