发明名称 CHEMICAL VAPOR DEPOSITION VAPORIZER
摘要 The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the vaporization of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, for deposition on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules. The vaporizer comprises thermally controlled components which are adapted for easy assembly and disassembly. A main vaporizing section provides a large heated surface for flash vaporization. A high conductance blocker is disposed at a lower end of the vaporizer to provide an extended vaporization surface. Optionally, a filter may be employed to capture unvaporized precursor droplets.
申请公布号 WO0005430(A1) 申请公布日期 2000.02.03
申请号 WO1999US16396 申请日期 1999.07.20
申请人 APPLIED MATERIALS, INC. 发明人 ZHAO, JUN;LUO, LEE;JIN, XIAOLIANG;CHANG, FRANK;DORNFEST, CHARLES;TANG, PO
分类号 B01J19/00;C23C16/448;H01L21/31;(IPC1-7):C23C16/44 主分类号 B01J19/00
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