发明名称 |
CHEMICAL VAPOR DEPOSITION VAPORIZER |
摘要 |
The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the vaporization of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, for deposition on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules. The vaporizer comprises thermally controlled components which are adapted for easy assembly and disassembly. A main vaporizing section provides a large heated surface for flash vaporization. A high conductance blocker is disposed at a lower end of the vaporizer to provide an extended vaporization surface. Optionally, a filter may be employed to capture unvaporized precursor droplets.
|
申请公布号 |
WO0005430(A1) |
申请公布日期 |
2000.02.03 |
申请号 |
WO1999US16396 |
申请日期 |
1999.07.20 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
ZHAO, JUN;LUO, LEE;JIN, XIAOLIANG;CHANG, FRANK;DORNFEST, CHARLES;TANG, PO |
分类号 |
B01J19/00;C23C16/448;H01L21/31;(IPC1-7):C23C16/44 |
主分类号 |
B01J19/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|