| 摘要 |
PROBLEM TO BE SOLVED: To isolate the lattice defect such as an expanded defect, etc., from a p-n junction region. SOLUTION: This MOS transistor contains the first conductive type well region 104a formed in a semiconductor substrate 100, the first precipitated region 106 formed in the first depth in the region 104a to control substrate defect by implanting the first non-conductive impurities, a gate electrode 108 formed on the well region 104a, the second conductive type source/drain region 114 formed in the second depth which is deeper than the first depth in the well region on both sides of the electrode 108, and the second precipitated region 116 formed in the above-mentioned region 114 to control substrate depth by implanting the second non-conductive impurities.
|
