| 摘要 |
PROBLEM TO BE SOLVED: To obtain sufficient ohmic contact between an electrode and a contact layer by forming a clad layer and the contact layer of compounds represented by specific formulae I, II doped with a P type impurity and falling the first and second compositions within specific ranges. SOLUTION: The semiconductor light emitting element is formed of a gallium nitride compound, and comprises an active layer 60 for emitting a light having a predetermined wavelength, a clad layer 70 for confining carrier in the active layer, a contact layer 80 provided adjacent to the clad layer, and electrodes 40, 50 for supplying a predetermined potential or current to the layers 70, 80. The layer 70 is formed of a formula I of Ga1xAlxN doped with a P type impurity to satisfy the relation of a first composition ratio (x) of 0<x<0.5. The contact layer 30 (80) is formed of a formula II of Ga1yAlyN doped with a P type impurity to satisfy the relation of a second composition ratio (y) of 0<y<x. Accordingly, a contact resistance of the P type layer can be reduced, and it is effective to use an oxide or oxide/metal electrode. |
