Method of producing a protective coating containing silicon carbide

摘要

A protective silicon carbide and free silicon layer production process comprises melting a silicon layer on a porous carbon layer. A homogeneous protective layer of SiC and free Si is produced on a substrate of melting temperature above that of silicon by applying a porous carbon layer of 40-95% open porosity, covering with a silicon layer such that the Si:C wt. ratio is more than 2.34, heating to above the silicon melting temperature in a vacuum or inert atmosphere and then cooling to room temperature.