| 摘要 |
PROBLEM TO BE SOLVED: To reduce the manhours and the lithography number required for forming a floating gate without imparing reliability and other functions. SOLUTION: In the non-volatile semiconductor memory device having a floating gate electrode comprising a polycrystal silicon film including impurities, an oxide film 113 is grown on a polycrystal silicon film 112, and a silicon nitride film 114 is further grown. The silicon nitride film 114 is patterned The injection of impurities into the polycrystal silicon film 112 and the patterning of the polycrystal silicon film are performed by this nitride film pattern 116. Thus, the lithography number and the process number are not increased, and the reliability is not impaired. Since the oxide film 113 is provided on the polycrystal silicon film 112, the impurities are not dispersed outward even in the process, wherein the impurities injected into the polycrystal silicon film 112 are deviated.
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