发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To suppress the increase of power consumption as much as possible even when a word line is set to a negative potential to rest a word line, in a semiconductor device having a function performing reset operation by driving a word line connected to a memory cell to restore a memory cell in a cell array from an activation state to a standby state. SOLUTION: This device is provided with a word line driving circuit 2 driving a word line connected to a memory cell and resetting the word line, and the device is constituted so that a reset level of the word line driving circuit 2 set when reset operation of the word line is performed is switched between a first potential of a ground potential and the like and a second potential of a negative potential and the like. Switching to the second potential of a reset level is preferably to be performed after reset operation is started and a level of a word line is reduced.
申请公布号 JP2000036191(A) 申请公布日期 2000.02.02
申请号 JP19980202307 申请日期 1998.07.16
申请人 FUJITSU LTD 发明人 TAKITA MASAHITO;MATSUMIYA MASATO;ETO SATOSHI;NAKAMURA TOSHIKAZU;HASEGAWA MASATOMO;KITAMOTO AYAKO;KAWABATA KUNINORI;KANO HIDEKI;KOGA TORU;ISHII YUKI
分类号 G11C11/413;G11C11/407;(IPC1-7):G11C11/407 主分类号 G11C11/413
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