| 摘要 |
PROBLEM TO BE SOLVED: To improve the EM(electromigration) resistance and the smoothness of the wiring layer at the upper layer or the second layer or higher without increasing the number of the processes having the multilayered wiring structure. SOLUTION: In the semiconductor device having a multilayerd wiring structure, an NSG layer 18 is formed as the second interlayer insulating film on a first wiring layer 15. A second ground layer 17 is formed on the NSG film 16. A second conducting layer 18 comprising Al alloy or the like is formed on the ground layer 17. For the NSG film 16, the film is formed by introducing water in, e.g. plasma CVD. Thus, the layer 16 contains water content so that the hydrogen-atom density becomes 1-2×1021 /cm2 at least in the region of the second ground side 17. When the BSG layer 16 includes the specified water content, the energy of the surface of the NSG layer is decreased, the crystal orientation of the crystal of the Ti layer of the second ground layer 17 is increased and the crystal orientation of the second conducting layer 18 at the upper layer thereof is increased.
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