| 摘要 |
<p>In a related art plasma etching apparatus, excessive neutral active species which have not contributed to the etching are diffused within a vacuum container, causing corrosion on an inner wall of the vacuum container, and edge sections of a semiconductor wafer affixed on a holder to be deeply etched. A plasma etching apparatus of the present invention is provided with a reactive member 6 at a substrate holder 30, and by this reactive member 6, neutral active species of fluorine which would not contribute to the etching are absorbed before the neutral active species of fluorine reach an inner wall of a vacuum container 1. Since reactive members 6 are also disposed on the inner wall of the vacuum container 1 and on covers 34, 37, the neutral active species of fluorine are absorbed also by these reactive members 6. Therefore, the corrosion on the inner wall of the vacuum container 1 or the like would not occur as it would be in the conventional way. In addition, neutral active species of fluorine which attempt to go around to a back side of a semiconductor wafer 50 are absorbed by the reactive member 6 disposed at the substrate holder 30, so that edge sections of the semiconductor wafer 50 would not be deeply etched as they would in the conventional way. <IMAGE></p> |
