| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability of a semiconductor element by reducing a leakage current and relaxing an abnormal electric field. SOLUTION: In this manufacturing method, the conductive layer 2 of a semi- insulating substrate 1 is element-isolated into a required patterning shape through mesa etching and left inside an element formation area, an insulator such as ozone is ion-implanted to step part 4, formed at the peripheral edge part of the conductive layer 2 by mesa etching and the step part 4 is constructed as an electrical insulating body. Also, since the ion implantation is conducted, the ions of the insulator advances deep in the semi-insulating substrate 1 and an insulation injection part 6 are formed at the lower part of the step part 4. Thus, since the part of the step part 4 completely carries an electrical insulation property and the insulation injection part 6 is formed at the lower part of the step part 4 of the semi-insulating substrate 1, the elements are completely insulated by the step part 4 provided with the electrical insulating property and the insulation injection part 6.
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