| 摘要 |
<p>A semiconductor substrate of a certain conduction type carries a metal layer with a junction which has a large total periphery. A first electrode forms an ohmic contact with the metal layer and a second electrode forms an ohmic contact with the semiconductor. The domain where the junction is formed consists of strips of 2-10 micron width. An insulating layer on the substrate has gaps 2-10 micron wide to expose the semiconductor area partly; the domain of the metal layer is arranged within the gaps.</p> |
