| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein a cracking due to doping and composition fluctuation is prevented. SOLUTION: A semiconductor device comprising an active structure comprising a substrate, a buffer structure or nucleus generation structure, and a circuit element. The nucleus generation layer is manufactured at a relatively low temperature and comprises at least one layer of an III-V group nitride compound comprising indium. At least one layer (the one directly deposited on a substrate is preferred), of a multi-layer structure, is made of an indium-containing III-V group nitride compound, acting as a buffer layer 16. The indium-containing layer is relaxed with a succeeding AlInGaN epitaxy. As a stress and crack are reduced, the flexibility in composition and doping adjustment is improved. Since the electrical and optical characteristics of a device is decided by the stress and distortion condition in the active structure, the composition and layer-pressure of the nucleus generation layer are adjusted to design the characteristics to a target. An indium-containing nitride of high quality is effectively grown at a relatively low temperature. |
