| 摘要 |
PROBLEM TO BE SOLVED: To provide an easily manufacurable bipolar transistor suitable for raising a frequency and the manufacturing method. SOLUTION: In this manufacturing method, a p-type SiGe layer 4 and an n-type Si layer 5 are successively grown epitaxially on an Si substrate 1 provided with an Si collector layer 3b, and a BSG(borosilicate glass) film 6 provided with an opening 6a is formed on it. Then, through heat treatment, boron in the BSG film 6 is made to diffuse inside the Si layer 5, the SiGe layer 4 and the collector layer 3b, an external base layer 8b is formed and a part below the opening 6a in the Si layer 5 becomes an n-type Si emitter layer 9. Thereafter, an emitter electrode 11 containing n-type impurities is formed inside the opening 6a of the BSG film 6, the impurities are diffused from the emitter electrode 11 to the Si emitter layer 9 through the heat treatment, and a high density emitter layer 9a is formed. A polar transistor for which the external base layer 8b and the Si emitter layer 9 are formed mutually in a self-aligning manner is formed through a simple process.
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