| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor Hall sensor, reduced in offset voltage with no magnetic field applied thereto, and cleared of a measurement error due to the offset voltage. SOLUTION: In this semiconductor Hall sensor, for example, an active layer 2 of N-type silicon is provided, in an island-separated manner, on a semiconductor substrate 1 of P-type silicon, and input-voltage contact layers 3a, 3b of N+ silicon and input-voltage electrodes 6a, 6b are provided on lengthwise both end parts of the active layer 2, respectively. Six voltage-sense contact layers 4a to 4f are provided on widthwise both sides, or three layers per side, of the active layer 2, and voltage-sense electrodes 5a to 5f are formed thereon, respectively. In such a silicon Hall sensor, an appropriate voltage is applied thereto with no magnetic field applied, an output voltage between a pair of electrodes is measured while changing the combination of the voltage-sense electrodes 5a to 5f, three of them disposed per side, and measurement is performed by using a combination of the voltage-sense electrodes that minimizes the offset voltage.
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