PRODUCTION OF SILICON CARBIDE SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To block micropipe defect existing in a silicon carbide single crystal by making the micropipe defect of a silicon carbide single crystal having the micropipe defect become in a state saturated with a vapor species of silicon carbide and then by repeating the procedure of the warm-up and cooling down of the silicon carbide single crystal. SOLUTION: The method of this invention is as follows: (1) preparing for heat treatment by holding a substrate crystal (silicon carbide single crystal) 1 having micropipe defect a in e.g. a crucible 3; (2) making the micropipe defect a become in a state saturated with a silicon carbide vapor species generated e.g. by the temperature rising of the silicon carbide 4 in the crucible 3; (3) heat-treating the crystal 1 by repeating the procedure of the warm-up and cooling down of the temperature of the crystal 1. It is possible to block in the micropipe defect a by efficiently recrystallizing silicon carbide in a quantity corresponding to vapor pressure difference due to the cooling down because silicon carbide sublimates in a quantity corresponding to equilibrium vapor pressure difference due to temperature difference in second warm-up and the union of dislocation progresses in second cooling down.