| 摘要 |
PROBLEM TO BE SOLVED: To form a ZnO buffer layer of good c-axis orientation on a substrate, over which a semiconductor layer comprising a good GaN is grown. SOLUTION: The film thickness of a ZnO buffer layer 3 formed on an Si substrate 2 is 3500 Å or more. Thus, a rocking curve half-value width of the ZnO buffer layer 3 of c-axis orientation is 4.5 deg. or less, providing the ZnO buffer layer 3 of good c-axis orientation. So, the crystallinity of a GaN layer 4 formed over it is good. |
