| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory cell capable of surely controlling the potential in a channel forming region in the case of data writing-in the memory cell. SOLUTION: A non-volatile semiconductor memory cell is provided with the five elements mentioned as follows, i.e., (a) an electrically rewritable memory element having source/drain regions 13 and channel forming region 12, a floating gate 15, an interlayer insulating film 16 and a control gate 17; (b) a word line connected to the control gate 17; (c) a bit line BL connected to one source/drain region 13A; (d) a control means prohibiting the data wiring-in to memory elements; (e) a control circuit controlling the control means. In such a constitution, the control means is composed of a dielectric film 24 held at (A) the first electrode 23 connected to either one source/drain region 13A (B) the second electrode 25 connected to the control circuit (C) the first electrode 23 and the second electrode 25.</p> |
