PRODUCTION OF SILICON CARBIDE SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To block micropipe defect existing in a silicon carbide single crystal without restraining the formation and taking over of micropipe defect in a newly growing layer. SOLUTION: The method of this invention is to fill micropipe defect 1a existing in a silicon carbide single crystal 1 with a silicon carbide material 6 and to block in the defect 1a existing in the crystal 1 by heat-treating the crystal 1 in a state that the defect 1a is saturated with a silicon carbide vapor species. When the defect 1a is filled with the material 6 the material 6 sublimes in heat treatment and the sublimation of silicon carbide from the inside wall of the defect 1a is prevented and therefore it is possible to efficiently block in the defect 1a. It is possible to block in the defect 1a with the material 6 e.g. by dissolving carbosilane into supercritical carbon dioxide and by pouring the carbosilane-dissolved supercritical carbon dioxide into the defect 1a.