发明名称 |
LIQUID-PHASE EPITAXIAL GROWTH MACHINE AND PRODUCTION OF OXIDE SINGLE CRYSTAL FILM |
摘要 |
PROBLEM TO BE SOLVED: To provide a liquid-phase epitaxial growth machine that can give an oxide single crystal film of good properties. SOLUTION: This liquid-phase epitaxial growth machine 10 is equipped with a cylindrical refractory lining 12. A cylindrical heater 14 is arranged on the outside of the refractory lining 12. A crucible-supporting bed 16 is placed inside the refractory lining 12 and a crucible 18 is supported by the supporting bed 16. The center axis of the crucible 18 is deviated from the center axis of the heater 14 by 10 mm. A substrate-rotating shaft 20 is arranged over the crucible and the substrate holder 22 is attached to the lower part of the substrate- rotating shaft 20.
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申请公布号 |
JP2000034190(A) |
申请公布日期 |
2000.02.02 |
申请号 |
JP19980214899 |
申请日期 |
1998.07.13 |
申请人 |
MURATA MFG CO LTD |
发明人 |
TAKAGI TAKASHI;FUJINO MASARU |
分类号 |
C30B19/08;C30B29/28;(IPC1-7):C30B19/08 |
主分类号 |
C30B19/08 |
代理机构 |
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