| 摘要 |
PROBLEM TO BE SOLVED: To prevent voids or stresses between a stripe layer and buried regrown layers. SOLUTION: A method for manufacturing optical semiconductor device includes a step of vapor-growing epitaxial layers 102, 103, and 104 having double hetero-structures on a single-crystal substrate 101, a step of performing mesa etching, and a step of burying and regrowing the layers 102, 103, and 103. In the method, the layers 102, 103, and 104 are continuously buried and regrown without removing a protective film after normal mesa surfaces 113 and 114 are formed by performing mesa etching by using a reactive etching gas and the protective film.
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