| 摘要 |
PROBLEM TO BE SOLVED: To execute the etching work of a prescribed shape to an organic low dielectric constant material film layer. SOLUTION: A wafer W is mounted on a lower electrode 106, arranged inside the processing chamber 102 of an etching device 10 and the temperature of the wafer W is maintained at -30 deg.C to 30 deg.C. Processing gas consisting of a gaseous mixture of N2, H2 and Ar, whose flow rate ratio (Ar/(N2+H2+Ar)) is 0.7-0.8, is introduced to the inside the processing chamber 102, and a pressure atmosphere inside the processing chamber 102 is set to 5 mTorr-15 mTorr. A high frequency power of 1,000 W-2,500 W at 13.56 MHz and a high frequency power of 500 W-1,000 W at 13.56 MHz are respectively impressed to a coil 154 and the lower electrode 106. By a plasma generated inside the processing chamber 102, the contact hole of the prescribed shape is formed in an interlayer insulation film layer, consisting of the organic low dielectric constant material of the wafer W.
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