SEMICONDUCTOR LASER DEVICE, ITS MANUFACTURE, AND PICKUP DEVICE

摘要

PROBLEM TO BE SOLVED: To stably obtain emission wavelengths of 780-nm and 650-nm bands. SOLUTION: The first light emitting section 1 of a semiconductor laser device is formed on one side of an n-type GaAs substrate 5 and composed of a double hetero-structure and a current blocking layer. The second light emitting section 2 of the laser device is formed on the other side of the substrate 5 and composed a double heterojunction structure and a current blocking layer. The double heterojunction structure and current blocking layer of the first light emitting section 1 are respectively composed of AlGaAs and GaAs and the double heterojunction of the second light emitting section 2 is composed of AlGaInP and GaInP. Consequently, the first section 1 emits light having a wavelength of 780 nm and the second section 2 emits light having a wavelength of 650 nm. Therefore, the information of all DVD media including CD-R media and that of CD media can be read out.