Semiconductor memory device including an internal power supply circuit having standby and activation mode

摘要

An internal power supply voltage generation circuit used for a semiconductor memory device is disclosed. The semiconductor integrated circuit device includes a memory unit for storing data, and an internal power supply voltage generation unit for generating an internal power supply voltage VINT from an external power supply voltage VCC. The internal power supply voltage generation unit has a standby internal power supply voltage generation circuit and an activation internal power supply voltage generation circuit. The activation internal power supply voltage generation circuit is controlled by a control circuit. When a plurality of banks are set in the memory unit, the control circuit activates the activation internal power supply voltage generation circuit while at least one bank is active.