| 摘要 |
A semiconductor light-emitting device longer in life time and higher in reliability is provided which is formed of, on a substrate (1), a first conductivity type cladding layer (3) and a second conductivity type cladding layer (7) made of ZnxMgYBe1-x-ySZSe1-z(0<x<1,0<y<1,0</=z<1) system compound semiconductor, at least one active layer (5) made of ZnACdBBe1-A-BSc Se1-C(0<A</=1, 0</=B<1, 0</=C<1), having a compressive distortion relative to the above substrate and located between the first and second conductivity type cladding layers, and at least one strain compensation layer having a tensile distortion relative to the above substrate and made of Znu Cd1-u SvSe1-v(0<u</=1, 0</=v<1).
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