发明名称 |
Method of manufacturing a thin film transistor with reduced parasitic capacitance and reduced feed-through voltage |
摘要 |
A method of producing an improved thin film transistor structure is provided having no source/gate or drain/gate overlap. A laser-assisted doping technique is applied to fabricate such transistors. A radiation filter is employed, which is transparent to light at the photolithography wavelength, but reflective or opaque at the laser wavelength. Eliminating source/gate and drain/gate overlap significantly reduces or eliminates parasitic capacitance and feed-through voltage between source and gate. Short-channel a-Si:H thin film transistors may be obtained having high field effect mobilities. Improved pixel performance and pixel-to-pixel uniformity is provided.
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申请公布号 |
US6020223(A) |
申请公布日期 |
2000.02.01 |
申请号 |
US19970959590 |
申请日期 |
1997.10.29 |
申请人 |
XEROX CORPORATION |
发明人 |
MEI, PING;LUJAN, RENE A.;BOYCE, JAMES B.;CHUA, CHRISTOPHER L.;HACK, MICHAEL G. |
分类号 |
H01L21/223;H01L21/225;H01L21/266;H01L21/336;H01L27/144;H01L27/146;H01L29/786;H01L31/0216;(IPC1-7):H01L21/00;H01L21/84 |
主分类号 |
H01L21/223 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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