| 摘要 |
A metal silicide blocking process for preventing formation of metal silicide on a first device and allowing formation of metal silicide on elements of a second device of an integrated circuit substrate is described. The process includes forming a gate electrode above the integrated circuit substrate, forming a first dielectric layer over the gate electrode and the substrate surface, forming a second dielectric layer above the first dielectric layer, etching anisotropically the second dielectric layer to form a second spacer portion adjacent to the first dielectric layer; masking the substrate surface of the first device to protect the first dielectric layer above the first device from being removed such that the substrate surface at the second device where the metal silicide is to be formed is exposed, etching the first dielectric layer to form a first spacer portion disposed between the gate electrode of the second device and the second spacer portion, the first spacer portion extends underneath the second spacer portion such that the first spacer portion is disposed between the second spacer portion and a portion of the substrate disposed beneath the second spacer portion, exposing the substrate surface of the first device, depositing a metal layer on the substrate surface and fusing metal ions from the metal layer with silicon ions from a plurality of device elements from the portion of the substrate surface where the metal silicide is to be formed to form metal silicide contact areas above the plurality of device elements.
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