Process for forming deep level impurity undoped phosphorous containing semi-insulating epitaxial layers

摘要

A reduced temperature low pressure metal organic chemical vapor deposition process for the production of semi-insulating deep level impurity undoped Group III-V phosphorous containing epitaxial layers. The present invention achieves production of semi-insulating layers at reduced growth temperatures in the approximate range of 490 DEG C. to 530 DEG C. Semi-insulating resistivities on the order of 106 ohm-cm to 109 ohm-cm are obtained according to the present process without resort to use of extrinsic dopants such as the transition metals typically used in conventional processes to obtain semi-insulating phosphorous containing layers, and without post processing annealing.