| 摘要 |
In a method of evaluating the reliability of a thin film transistor (TFT), time coefficient beta , voltage coefficient d and temperature coefficient phi 0 are experimentally produced from -BT stress tests, and the life of a TFT under -BT stress conditions is evaluated using the following expression: where tau represents the life time of the TFT, DELTA Vth tau the tolerant threshold voltage shift amount of the TFT, t0 (1/ DELTA Vth0) constant, q elementary electric charge, k Boltzmann constant, T temperature, V0 gate voltage, and t0X the thickness of the gate oxide film.
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