发明名称 |
Multilevel interconnection with low contact resistance in a semiconductor device |
摘要 |
A multilevel interconnection between a polycide layer and a polysilicon layer and a method of forming thereof are provided. The multilevel interconnection comprises: a first impurity-containing conductive layer formed on a semiconductor substrate; a first silicide layer, having a first region thinner than a second region, formed on the first impurity-containing conductive layer; an interlayer dielectric layer formed in other than the first region; a contact hole for exposing the first silicide layer of the first region; and a second impurity-containing conductive layer connected to the first silicide layer through the contact hole. Therefore, increases in contact resistance between conductive layers can be prevented.
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申请公布号 |
US6020641(A) |
申请公布日期 |
2000.02.01 |
申请号 |
US19950577394 |
申请日期 |
1995.12.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, YONG-JAE;LEE, SOO-CHEOL |
分类号 |
H01L21/768;H01L21/336;H01L23/522;H01L23/532;H01L29/78;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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