发明名称 |
DEVICE AND METHOD FOR PLASMA TREATMENT |
摘要 |
A plasma processing apparatus and plasma processing method are provided to be used for etching, ashing, CVD, etc. in the manufacturing, etc. of large-scale integrated circuits (LSIs) and liquid crystal display panels (LCDs). The plasma processing apparatus generates plasma by using a microwave introduced through a microwave window, while controlling the ions in the plasma by varying the RF voltage applied to the sample stage. The apparatus is characterized to include a counter electrode (grounded electrode) which is located at the rim section of the microwave window against the sample stage. The plasma processing method implements a plasma process for a sample with the plasma processing apparatus. The method and apparatus are capable of alleviating the sticking of particles to the sample and metallic contamination, and also capable of improving the yield of semiconductor devices, etc. <IMAGE> |
申请公布号 |
EP0831680(A4) |
申请公布日期 |
2000.02.02 |
申请号 |
EP19970908538 |
申请日期 |
1997.03.27 |
申请人 |
SUMITOMO METAL INDUSTRIES, LTD. |
发明人 |
MABUCHI, HIROSHI;HAYAMI, TOSHIHIRO;IDA, HIDEO;MURAKAMI, TOMOMI;TAKEDA, NAOHIKO;TSUYUGUCHI, JUNYA;KATAYAMA, KATSUO |
分类号 |
B05D7/24;C23C16/44;C23C16/511;H01J37/32 |
主分类号 |
B05D7/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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