发明名称 |
Radioactive rays detection semiconductor device |
摘要 |
The present invention intends to provide a radioactive rays detection semiconductor device comprises a substrate, an insulating layer formed on the substrate, p-type Si films formed on the insulating layer and equal in resistance value change rates due to temperature change and different in thickness so as to differ in the changes of the resistance values corresponding to the change of the total dose of the radioactive rays, an insulating film covering the p-type Si films, electrodes deposited in contact holes which are formed in the insulating film to reach both end of the p-type Si films, and Al wiring connecting the electrodes close to each other.
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申请公布号 |
US6020619(A) |
申请公布日期 |
2000.02.01 |
申请号 |
US19980078262 |
申请日期 |
1998.05.13 |
申请人 |
DORYOKURO KAKUNENRYO KAIHATSU JIGYODAN;MITSUBISHI HEAVY INDUSTRIES, LTD. |
发明人 |
WADA, TAKAO;ISHIBASHI, YUZO;ISHII, SHIGERU;KURODA, YOSHIKATSU |
分类号 |
G01T1/24;G01T1/26;H01L31/09;H01L31/115;(IPC1-7):H01L27/14;G01J1/24;H01L31/00 |
主分类号 |
G01T1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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