发明名称 |
Spin dependent tunneling memory |
摘要 |
A digital data memory having a bit structure in a memory cell based on a dielectric intermediate separating material with two major surfaces having thereon an anisotropic ferromagnetic thin-film of differing thicknesses. These bit structures are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series connected members of storage line structures. A corresponding conductive word line structure adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations.
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申请公布号 |
US6021065(A) |
申请公布日期 |
2000.02.01 |
申请号 |
US19970965333 |
申请日期 |
1997.11.06 |
申请人 |
NONVOLATILE ELECTRONICS INCORPORATED |
发明人 |
DAUGHTON, JAMES M.;EVERITT, BRENDA A.;POHM, ARTHUR V. |
分类号 |
G11C11/14;G11C11/15;G11C11/16;G11C11/56;H01F10/20;H01F10/32;H01L21/8246;H01L27/105;H01L27/22;H01L43/08;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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