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发明名称
Verfahren zum Aufwachsen mindestens einer dotiertenHalbleiterkristallschicht
摘要
申请公布号
DE1544305(B1)
申请公布日期
1970.07.23
申请号
DE19661544305
申请日期
1966.12.08
申请人
SANYO ELECTRIC CO
发明人
KOMATSU EIICHI;HIGUCHI YOSHINORI;NIINA TATSUHIKO
分类号
C30B11/12
主分类号
C30B11/12
代理机构
代理人
主权项
地址
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