| 摘要 |
PROBLEM TO BE SOLVED: To enhance residual polarization characteristics by forming a dielectric film on a semiconductor substrate directly or through other layer and then performing annealing while applying a field to the dielectric film. SOLUTION: Platinum is deposited by DC sputtering onto a first interlayer insulation film, i.e., a silicon oxide film 202, formed on a semiconductor substrate 201 and then a lower electrode 203 is formed by etching followed by formation of a dielectric film 204 by sputtering. Subsequently, the semiconductor substrate 201 is placed in a heating furnace and subjected to annealing while applying a DC voltage of 100 V between parallel plate electrodes. Thereafter, an upper electrode 205 is formed on the dielectric film 204 followed by sequential formation of a second interlayer insulating film 206 of silicon oxide film, a contact hole, an aluminum wiring layer 207 and a protective film 208 thus forming a semiconductor device. |
