| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a capacitor of a semiconductor element, wherein an oxygen diffusion preventing characteristics is improved to prevent a leakage current from increasing. SOLUTION: A first stage in which a polysilicon plug 22 is formed on a semiconductor substrate 20, a second stage where a diffusion preventing film comprising a Ti film 23 and a Tin film 24 is formed on the polysilicon plug 22, a third stage where an iridium(Ir) film 27 and platinum(Pt) films 28 and 31 are sequentially laminated on the diffusion preventing film, a fourth stage where the diffusion preventing film, the Ir film 27, and the Pt films 28 and 31 are patterned to form a lower part electrode, a fifth stage where a dielectric film is formed on the Pt film in a high-temperature oxygen atmosphere, and a sixth stage where an upper part electrode is formed on the dielectric film, are provided. |
