| 摘要 |
PROBLEM TO BE SOLVED: To provide a method by which the diffused layer of a transistor and a storage electrode buried in a trench can be connected to each other in a self-aligned way. SOLUTION: In a semiconductor device 100 having a trench capacitor 4, the trench capacitor 4 is constituted of a storage electrode section 5, a capacitor insulating film 7 covering the main body section 6, the outer periphery, and lower end face of the section 5, a first ion implantation layer 8 which covers part of the outer periphery and lower end face of the insulating film 7, a collar section 10 which is composed of an insulating layer 10 covering the outer periphery of the main body section 6 of the electrode section 5 near the upper part 9 of the section 5, and an enlarged-diameter section 12 which is provided near the upper end 11 of the electrode section 5 and has a width larger than the main body section 6 has. A capacitor insulating film 7 provided to the part of the outer peripheral edge of the enlarged-diameter section 12 of the electrode section 5 is jointed to a diffused layer 13 constituting an element 3. |
