| 摘要 |
PROBLEM TO BE SOLVED: To materialize the rise of yield and the rise of properties, by preventing such state of things that the phenomena of a mobile electrode and a fixed electrode stick to each other from occurring in the stage of middle of manufacture. SOLUTION: The basic structure of a semiconductor acceleration sensor 1 is completed, by (a) preparing an SOI substrate 14, where a single crystal silicon film 14b is provided through a silicon oxide film 14c on a single crystal silicon wafter 14a, and then, by executing an electrode pad formation process (b) which forms electrode pads 4c and 5c, a dimension adjustment process (c) which grinds and polishes a single crystal silicon film 14b, a mask formation process (d) which forms a mask 15, a trench formation process (e) which forms a trench 16 reaching a silicon oxide film 14c in a single crystal silicon film 14b, a first etching process (f) which wet etches the single crystalline silicon wafer 14a, leaving a specified thickness, a second etching process (g) which removes the above remaining single crystal silicon wafer 14a by dry etching, and a third etching process (h) which removes the silicon oxide film 14c by dry etching.
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