发明名称 POWER AMPLIFIER
摘要 PROBLEM TO BE SOLVED: To reduce the occupying area of a power amplifier. SOLUTION: In a high-frequency power amplifier 1, TRSs 21 and 22 are respectively mounted on the bottoms of cavities 11 and 12 formed on one main surface of a wiring board 2 opposite to the passive element mounting wiring-side main surface on which passive elements, such as the capacitor 4, resistor 5., etc., are mounted. Since the area of the passive element-side main surface of the wiring board 2 can be reduced by the areas of the TRSs 21 and 22 mounted on the opposite-side main surface, the occupying area of the amplifier 1 can be reduced as a whole. When the TRSs 21 and 22 are soldered to lands formed on the wiring board 2, the heat generated from the TRSs 21 and 22 can be radiated directly to the board 2 through the soldered sections and lands. When grounding terminals formed around cavities are soldered to the lands for grounding terminal of the board 2, the moisture resistance of the amplifier 1 can be improved when the amplifier 1 is mounted on the surface of the board 2, because the TRSs can be sealed airtightly by means of the soldered sections.
申请公布号 JP2000031331(A) 申请公布日期 2000.01.28
申请号 JP19980214891 申请日期 1998.07.14
申请人 HITACHI LTD;HITACHI ULSI SYSTEMS CO LTD;HITACHI TOBU SEMICONDUCTOR LTD 发明人 MARUYAMA MASASHI;AKAMINE HITOSHI;YAMADA TOMIO;KIKUCHI SAKAE;MORIYAMA SHINJI;HIBINO MITSUAKI;ENDO TSUNEO
分类号 H01L23/12;H01L25/04;H01L25/07;H01L25/18;(IPC1-7):H01L23/12 主分类号 H01L23/12
代理机构 代理人
主权项
地址