| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor phase epitaxial growth method for III-V compound semiconductor with which the concentrations of impurities in an AlGaAs layer can be lowered, without increasing V/III ratio (i.e., increasing the supplying quantity of AsH3). SOLUTION: Supplying paths 8 and 9, through which group III and V gaseous starting materials are separately introduced to a reaction chamber 1 are provided and, at the same time, a heater 10 which accelerates the decomposition of a group V gaseous starting material in a growing region is provided to the intermediate section of the path 8, so as to generate an abundant group V radical in the growing area by supplying the preheated group V gaseous starting material separately from the group III gaseous starting material and accelerating the decomposition of the group V gaseous starting material in the growing region. The group V radical is made to work for cutting the linkage between the metal of an organometallic compound arriving at a GaAs substrate 5 and carbon or oxygen. Therefore, the concentrations of impurities taken in a grown AlGaAs layer can be lowered without increasing the V/III ratio, when the layer is grown.
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