发明名称 DEVICE AND METHOD FOR EXPOSURE, AND MANUFACTURE OF SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To transfer a pattern with high resolution and with deep depth of focus. SOLUTION: An illuminating optical system which projects lighting light upon a mask 27 and a projection optical system 29 which projects lighting light upon a substrate 30 are provided, and the pattern of the mask 27 is transferred to the substrate 30 by projecting the illuminating light rays. In the optical path of the lighting optical system, the illuminating light projected upon the mask 27 is transformed to at least two luminous fluxes, which are inclined by the angles which vary depending upon the fineness of the pattern by means of a luminous flux transforming member 12 provided at a position, which is nearly conjugate to the mask 27 or its vicinity.
申请公布号 JP2000031047(A) 申请公布日期 2000.01.28
申请号 JP19990174240 申请日期 1999.06.21
申请人 NIKON CORP 发明人 SHIRAISHI NAOMASA
分类号 H01L21/027;G03F7/20;(IPC1-7):H01L21/027 主分类号 H01L21/027
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