| 摘要 |
PROBLEM TO BE SOLVED: To store plural bits in one cell by providing a data storage layer forming a shape beforehand selected so as to provide at least three magnetic domain structures and a reference layer having a fixed magnetization direction decided to an angle of a direction beforehand selected so as to discriminate the magnetic domain structure of the data storage layer. SOLUTION: A logical state of a magnetic memory cell 40 answers to a relative magnetization direction between the data storage layer 50 and the reference layer 54. The magnetization direction M2 in the reference layer 54 is fixed to a specified direction, and the magnetization direction M1 in the data storage layer 50 is changed according to the logical state of the magnetic memory cell 40. Respective logical states of the magnetic memory cell 40 answer to individual direction of the magnetization direction M1. The changeable direction of the magnetization direction M1 is related to the magnetic domain structure of the data storage layer 50. The data storage layer 50 forms four magnetic domain structures answering to the logical states 0-3 of the magnetic memory cell 40. Thus, two bits of information are stored in one magnetic memory cell 40.
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