| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor thin film deposition system in which constant gas can be supplied to a reaction container or an exhaust pump while preventing a reaction gas from being mixed in the reaction container. SOLUTION: The deposition system comprises sections 1110, 1120 for supplying gas to a reaction container 200, an exhaust pump 310, a section 1130 for supplying inert gas to the reaction container 200, reaction gas coupling lines 21, 22, 71, 72 coupling the reaction gas supply section, the reaction container and the exhaust pump, an inert gas coupling line 23 coupling inert gas supply section and the reaction container, a large number of valves arranged in the reaction gas coupling lines and the inert gas coupling line, first flow control valves 112a, 122a arranged between the reaction gas supply section and the reaction container in order to control flow rate of fluid flowing between them, and second flow control valves 114a, 124a arranged between the reaction gas supply section and the exhaust pump in order to control flow rate of fluid flowing between them.
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