| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can operate at a high speed with a high reliability, by forming an interlayer insulating film having a low dielectric constant without having an adverse effect on wiring. SOLUTION: A conductive film 2 and a plasma oxide film 3 are formed on a semiconductor substrate 1 and subjected to a patterning process based on photolithography and etching techniques so that a pattern WR of the film 2 and 3 has trenches TR having their bottom surfaces forming the substrate 1. Then a plasma oxide film 4 is formed on the entire surface of the semiconductor substrate 1, the plasma oxide film extruded on upper sides of the trenches TR closes the grooves TR, forming gaps therein. The film formation is further continued so that the trenches TR even in the wiring pattern WR are filled with the plasma oxide film 4. Next, the plasma oxide film 4 is polished to have a flattened surface.
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