| 摘要 |
PROBLEM TO BE SOLVED: To prevent ion from passing through a grain boundary in inclined ion-plantation to a channel region by increasing the thickness of a lowermost layer film of a multilayer film thicker than the range of the inclination ion to be implanted into a sidewall at the time of implanting the ion. SOLUTION: A gate electrode 16 of a MOS transistor is formed in a two- layer film structure having an amorphous silicon film 15a as a lower layer film and a polycrystal silicon film 15b as an upper layer film via a gate oxide film 2. Further, the thickness of the film 15a is made larger than the range of graded ion to be implanted into a sidewall of the film 15a in the film in the case of inclined ion-implanting the ion to form source/drain regions 6, 7 with the electrode 16 as a mask. Thus, it can prevent ions from passing through a grain boundary of a channel region, thereby obtaining stable transistor characteristics.
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