| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a liquid crystal display device which may be manufactured at a cost lower than the cost of a liquid crystal display device of a full-surface polysilicon type and at a higher throughput higher than that thereof. SOLUTION: This liquid crystal display device is constituted by forming picture element parts 20 and drive parts 40 for executing switching of these picture element parts 20 on the same substrate 10. An active layer 24 formed at the TFTs(thin-film transistors) 21 of the picture element parts 20 consists of amorphous silicon. The active layer 44 formed at the TFTs 41 of the driver parts 40 consists of the polysilicon reformed by heat treating the amorphous silicon. The film thicknesses of the active layers 24, 44 are formed thicker than 30 nm and at <=60 nm.</p> |
