| 摘要 |
PROBLEM TO BE SOLVED: To reduce ON resistance of a power MOSFET by limiting a region for forming a body contact, and using a diode cell, thereby decreasing the width of the MOSFET. SOLUTION: In the MOSFET 70, two MOSFET cells 72 are provided for a plurality of diode cells 74. Gates of the MOSFET 70 are represented by 76A to 76D. The cells 74 are partly sandwiched between regions of a gate part 76C and a gate part 76D, and additional MOSFET cells 18 are formed so as to limit a region for similarly forming a body contact between the cells 74. Thus, the trench gate type power MOSFET having a cell density of 178 M cell/square inch can be manufactured, and an ON resistance value can be reduced.
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