发明名称 FABRICATION OF SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To provide a fabrication method of semiconductor wafer in which accuracy is enhanced at beveled part by performing a beveling step following to at least one time of both sides simultaneous surface grinding. SOLUTION: The method for fabricating a semiconductor wafer comprise step E for slicing single crystal ingot to obtain a thin disc-like wafer, a step for planarizing the wafer surface by surface grinding, a step K for beveling the outer circumferential edge part of the wafer, and a step K for mirror finishing the wafer surface. The inventive method further comprises a step for grinding the opposite sides of the wafer simultaneously by means of a both side grinding machine in order to remove waving of the wafer prior to the beveling step and beveling accuracy is enhanced by performing secondary grinding step of single or both side simultaneous grinding following to the beveling step.
申请公布号 JP2000031099(A) 申请公布日期 2000.01.28
申请号 JP19980192555 申请日期 1998.07.08
申请人 SHIN ETSU HANDOTAI CO LTD;NAGANO DENSHI KOGYO KK;NAOETSU ELECTRONICS CO LTD;MIMASU SEMICONDUCTOR INDUSTRY CO LTD 发明人 OKABE KEIICHI;KATO TADAHIRO;OKUNI YOSHIYUKI;OSHIMA HISASHI
分类号 H01L21/304;H01L21/302;(IPC1-7):H01L21/304 主分类号 H01L21/304
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