发明名称 PHOTORESIST SYSTEM
摘要 PROBLEM TO BE SOLVED: To obtain a portable conformable mask system suitable for photoetching using i-lines. SOLUTION: A lower resist layer comprising a polymethyl methacrylate in which a coloring material selected from the group of N,N'-dibutyl-N,N'-di(1-(4,4'-dicyano-1,3-butadiene))-1,6-hexadiamines and 3-(2- benzothiazolyl)-7-(diethylamino)-2H-1-benzopyran-2-one have been dissolved is deposited on a semiconductor substrate and an upper resist layer contg. a resist material contg. a coloring material B having a chemical structure of the formula and a novolak resin to which acetate of a mono or dialkyl ether of ethylene glycol (solvent) and diazonaphthoquinone have been added is deposited on the lower resist layer.
申请公布号 JP2000029226(A) 申请公布日期 2000.01.28
申请号 JP19990178491 申请日期 1999.06.24
申请人 HEWLETT PACKARD CO <HP> 发明人 GOEL ATUL
分类号 H01L21/027;G03F7/004;G03F7/028;G03F7/09;G03F7/095;G03F7/11;G03F7/20;G03F7/26 主分类号 H01L21/027
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