| 摘要 |
PROBLEM TO BE SOLVED: To reduce the manufacturing cost of a charge transfer device by decreasing the number of manufacturing steps to provide transfer gate electrodes of a single-layer structure and preventing generation of a potential pocket under between adjacent transfer gate electrodes, which causes signal charges which are not transferred. SOLUTION: A masking film 21 of a pattern, having openings 22 at the boundary between respective adjacent transfer gate electrodes 26t and 26s, is formed on a polycrystalline silicon layer 26 to be the transfer gate electrodes 26t and 26s on a gate insulating film 27, and a material insulating the polycrystalline silicon layer is implanted using the film 21 as a mask. Thereafter, an isolation insulating film 30 is formed through annealing between the respective adjacent transfer gate electrodes 26t and 26s, into which the material of the polycrystalline silicon layer 26 was ion implanted.
|
